A novel In/sub 0.49/Ga/sub 0.51/P/GaAs MSM photodetector

A novel high-performance GaAs metal semiconductor-metal photodetector (MSM-PD), with an undoped In/sub 0.49/Ga/sub 0.51/P capping layer, is reported in this paper. The main features of this device include: low dark current of less than 8 nA, low capacitance of 140 fF at 10 V with device area of 75x75 /spl mu/m/sup 2/; short rise time of 25 ps at 8 V; and a high responsivity of 0.43 A/W with the wide linear responsivity region (ranged from 1 to 100 /spl mu/W at 10 V) for /spl lambda/ = 0.83 /spl mu/m.