Ion-implanted GaAs MESFET's with W/WN/sub x/ bi-layer gate designs

Characteristics of WNx films, deposited by a RF sputter, were evaluated through high temperature heat treatment. WNx films present themselves as a thermally stable material, which is suitable for gate material used in ion-implanted metal-semiconductor field-effect transistors (MESFET's). A bi-layer WNx/W film structutre was proposed for the purpose of reducing sheet resistivity, while remaining the high thermal stability properties. DC and RF performance of Ion-implanted GaAs MESFET's fabricated by both WNx and WNx/W gates were also characterized.