ONo SMD - a silicon microstrip detector with ONO a-c coupled capacitor

A single - sided silicon detector with AC-coupling capacitors and Polysilicon bias resistors has been designed and fabricated. The proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual SiO/sub 2/ layer as the dielectric of coupling capacitor in conjunction with a reordering of sequence for layer formation were employed to produce detectors with self-moisture - protection , free from effect of pin-holes and with-high breakdown voltage capacitors. We are performed a series of study to understand the characteristics of the detector. The lowest detector leakage current is about 100nA/cm/sup 2/ at 100 Volts. The breakdown voltage was within 160-200 Volts for the ONO layer, In which we didn' t find any pin - hole out of 384 samples. According to the beam-test vesults at CERN in 1992 and 1993 , an average SI/N ratio of 30 and a best spatial resolution of 3.5+-0.5/spl mu/m with an efficiency close to100% were obtained for the ONO-SMD.