Laser ablated pyroelectric thin films for room temperature IR sensors

High quality of Sr/sub 0.5/Ba/sub 0.5/Nb/sub 2/O/sub 6/ (SBN50) and Pb/sub 0.95/La/sub 0.05/Ti/sub 0.9875/O/sub 3/ (PLT5) pyroelectric thin films were successfully deposited on Pt-coated silicon by Pulsed Laser Deposition Technique. In this paper, the effect of deposition conditions on the crystallinity and pyroelectricity of SBN50 and PLT thin films was systematically examined. We have found that, SBN50 films have higher dielectric constant /spl epsilon/r of 928 and larger pyroelectric effect (measured by dynamic voltage response) Rv of 1.8*10/sup 3/ V/W at 25 Hz without a poling treatment. Three different PLT films were compared and the PLT5 films possess superior pyroelectric property ( Rv of 1.2*10/sup 3/ V/W at 10 Hz) to the rest two compositions.