Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Si/sub 1-x/Ge/sub x/ layers sandwiched between Si were grown at low temperature of 450/spl deg/C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.