Power GaAs FET temperature dependent modeling and circuit simulation validation

A novel power GaAs FET large-signal modeling method is presented in this paper. The method is based on the pulsed I-V measurements without pre-bias DC at different temperatures. The model parameters including temperature coefficients are extracted. Effects of self-heating and ambient temperatures are simulated by using a extended harmonic balance technique. The simulation results are compared to measurements of output power and efficiency for a C-band power amplifier.