Relation between two-dimensional electron gas density and the size of material structure of planar doped HEMT and PHEMT

The relation has been described between the structure sizes of material at the spacer layer, /spl delta/-modulation doped layer, barrier depleted layer and 2DEG density at the heterojunction interface layer, the pinch-off voltage, and the channel current of the HEMT and PHEMT. This is very useful in the design process of materials and devices in the field of microwaves and millimeter waves.