High-speed, high-power switching of semiconductor devices

Pulse switching characteristics of GTO thyristors and IGBT are reported. Switching characteristics of devices were initially investigated. For GTO, pulse switching with voltage of 3000 V, peak current of 9000 A, and di/dt of 8000 A//spl mu/s were verified. 800 V, 1500 A, 2600 A//spl mu/s were obtained with IGBT. Next, high-voltage switch modules consisting of these devices were designed and tested. The GTO switch module, consisting of five series devices, was of coaxial construction. Blocking voltage of 11.5 kV, current of 4500 A, di/dt of 2500 A//spl mu/s were obtained with this switch module at a repetition rate of 100 pps. The IGBT switch module, consisting of ten series and two parallel devices, was of parallel conductor construction. With this switch module, blocking voltage of 6 kV, current of 2200 A, di/dt of 3000 A//spl mu/s were obtained.