Room temperature CW operation of all-MOCVD-grown SQW lasers on Si using AlGaAs/AlGaP intermediate layers

All of room temperature CW operating lasers have been directly grown (twostep growth technique) on Si by combination of MBE and MOCVD techniques [l]. However, the GaAs/Si grown by the two-step growth technique still have the problems, such as the roughness of the surface morphology and Si autodoping in the GaAs layers.