A simulation model for SiC power MOSFET based on surface potential

In this paper, we propose a surface-potential-based simulation model of SiC power MOSFETs for accurate circuit simulation. By considering physical structure and behavior of vertical power SiC MOSFETs, the proposed model reproduces static and dynamic characteristics upon wide range of bias voltages. Through experiments using a commercial SiC power MOSFET, good agreements have been observed between measurement and simulation in I-V, C-V characteristics. Good match in transient behavior beyond 1 MHz is also confirmed.