Lissajous Electron Plasma Etching For Sub-half Micron LSI

In this paper, we propose the use of Lissajous Electron Plasma (LEP)4) which is a low pressure, non-magnetic plasma generation process. LEP is fundamentally different from conventional triode plasmas in its unique use of a rotating electric field to produce cycloid-like electron trajectories. This paper describes the characterization of the plasma and demonstrates its usefulness to sub-half micron etching in comparison with a magnetron enhanced RIE (MERIE) process.