Sub-Quarter-Micron PMOSFETs With Shallow Source And Drain Formed By Rapid Vapor-phase Doping (RVD)

PMOSFETs with shallow junctions were fabricated by Rapid Vapor-phase Doping. Those devices have 60-nm source and drain regions which produces an excellent short channel characteristics, that is, the threshold voltage remain unchanged down to a gate length of 0.25 μm. This result confirms shallow junctions by RVD are effective to suppress the short channel effect.