Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs

The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche. The statistical properties also allow to more accurately describe e.g. the value of the self sustaining avalanche current that is crucial in designing optical detection systems using avalanche photo diodes or single photon avalanche diodes (SPADs). More accurate modelling is shown to allow improving on e.g. count rates, dead time and afterpulsing in quenching and recharge circuits for SPADs. Measurements are performed on diodes in a 140 nm SOI CMOS technology.