A surface-field-based compact model for double-gate MOSFETs with continuous and discrete doping profiles

A unified continuous and discrete compact model covering all device operating regions for double-gate MOSFETs is developed. By applying special variable transformation method, a simple algebraic equation is derived to correlate the inversion-charge induced surface potential to field. Such an algebraic relation allows the drain-current formula to be derived without solving the surface-potential distribution.