Improved performance of HEMTs with BN as heat dissipation

High electron mobility transistors (HEMTs) are of great interest in applications requiring high frequency and high power. However, self-heating due to the inefficient heat dissipation limits the performance of the transistors. Here we improve the thermal management of HEMTs utilizing the few-layer boron nitride as heat spreader, which is applicable in the integrated circuits. DC and RF performance of the transistors are both enhanced with the adopted heat dissipation. It is attributed to temperature reduction around the hotspot in the transistors, indicated by the finite element simulation.