Characteristics of a highly reliable amorphous silicon antifuse

The α-Si:H antifuse is very promising for high-speed and high-density FPGA. A newly developed antifuse with the structure of Al/α-Si:H, N/α-Si:H/Al was prepared by surface treatment with nitrogen plasma for α-Si:H thin film. The effect of this surface treatment on characteristics of the α-Si:H antifuse was investigated. And N plasma treatment can significantly improve the performance and reliability of α-Si:H antifuse.