High-impedance differential antenna with high gain for graphene-based terahertz detector

Graphene field-effect transistor (FET) has been successfully demonstrated for terahertz (THz) detection at room temperature. This graphene FET has a differential feeding structure and a high output impedance up to several thousand Ohms. These characteristics significantly challenge the antenna design, especially a high-performance antenna. To alleviate this issue, this paper presents a circularly bended dipole antenna on silicon substrate. The results show that, this novel antenna features a differential pair, a high impedance of 5000 Ohms, a high gain of 9.47 dBi, and also a narrow bandwidth of 3 GHz to filter out input noise. This antenna is a very good candidate for inherent integration, and will significantly improve the performance of the graphene-based THz detector.