Modeling and simulation of InAs/GaSb type-II superlattices with different interface layers

Interface (IF) layers have great influence on the performance of InAs/GaSb type-II superlattice, which can not only balance the strain between adjacent layers, but also change the absorption cutoff wavelength and relative absorption strength. In this study, a modified k·p method based on envelope function approximation is used to theoretically investigate different IF influence on Auger recombination, absorption cutoff wavelength and relative absorption strength. The results of modeling and simulation show that different optical properties can be obtained by different IF.