Parametric study of DRIE process for enhancing the profile-preserving property of square through silicon via

TSV has emerged as a promising technique for three dimensional packaging. Square TSV is employed for some special type SRAM and DRAM memories, which are usually fabricated at individual advanced IC foundries. The profile- preserving property are usually very important and there is close relationship between the related process condition and the profile-preserving property. In this paper, parametric study of related deep reactive ion etching process for square TSV are conducted, and high density square TSV with 10000 pins per square centimeter is fabricated employed the optimized process.