Back biasing effects in a feedback steep switching device with charge spacer

In this work, the back gate bias (VBG) effect on the threshold voltage (VT) of a feedback steep switching device has been studied using TCAD simulations. Unlike other devices, there was a region where VT of a feedback switching device was increased even though VBG was increased due to the raised hole barrier. These findings indicate that a new VT modulation method is required other than ground plane or VBG schemes.