High quality Ge-OI, III–V-OI on 200 mm Si substrate

High quality germanium (Ge), III-V (GaAs, GaN) on insulator substrates (“X”-OI, X = Ge, GaAs or GaN) are demonstrated on 200 mm Si wafer. The Ge or III-V epitaxial films are grown directly on the Si donor wafers using a metal-organic chemical vapour deposition (MOCVD). The epilayers are then bonded and transferred to another Si (001) handle wafers to form various “X”-OI substrates. The quality of the epitaxial films (in term of threading dislocations density, TDD) on the X-OI can be further improved through a thermal treatment to mid-10⁶ /cm².