Charge pumping EDMR towards charge/spin manipulation in silicon at room temperature

While the silicon quantum electronics is a rapidly growing research field, the charge and spin manipulation in silicon is still limited at cryogenic temperatures. Towards the room temperature manipulation of electronic charges and spins, we here apply a method which we call the charge-pumping electrically-detected magnetic resonance (CF EDMR) to silicon MOSFETs. The basic operation was confirmed at room temperature, and the defects (localized states) at the MOS interfaces were successfully detected.