Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs

Pseudomorphic Ge
_0.91
Sn
_0.09
on Ge on Si with strong photoluminescence and low defect density is used for p-MOSFET channels. The mobility of Ge
_0.91
Sn
_0.09
Quantum Well p-MOSFETs are higher than control Ge p-MOSFETs due to hole population in the GeSn wells. The 7.5% mobility enhancement on <;110> channel direction is observed using external transverse uniaxial tensile strain (~0.11%). The highest [Sn] of 9% in the channels grown by CVD, Pt SB S/D, high I
_on
/I
_off
ratio, and strain-enhanced mobility are obtained in this work.