Influence of metallization layout on aging detector lifetime under cyclic thermo-mechanical stress

The influence of the layout on early warning detectors in BCD technologies for metallization failure under cyclic thermo-mechanical stress was investigated. Different LDMOS transistors, with narrow or wide metal fingers and with or without embedded detectors, were used. The test structures were repeatedly stressed by pronounced self-heating until failure (a short circuit) was detected. The results show that the layout of the on-chip metallization has a large impact on the lifetime. A significant influence of the detectors on the lifetime was also observed, in our case causing a reduction of more than a factor of two, but only for the test structure with narrow metal fingers. The experimental results are explained by an efficient numerical thermo-mechanical simulation approach, giving detailed insights into the strain distribution in the metal system. These results are important for aging detector design and, morever, for LDMOS on-chip metal layout in general.