Switching characterization of SiC half bridge module for high power density converter

To drive SiC power module with high-speed switching, the stray inductance becomes a key factor in converter design. In this work, the stray inductances of module and peripheral circuits are investigated by simulation and measurement. With the loop stray inductance of 29.2 nH, the module is tested up to 800 V and 50 A with insignificant EMI issues of ringing and overshoot. And the dv/dt ratios at turn-off and turn-on transitions are 23.6 and 12 V/ns respectively without shoot-through issue. The relationship between the switching loss and load current is also derived, which can be used in the future optimization of converter efficiency.