A Verilog-A based semiclassical model for dual gated graphene field-effect transistor

In this paper, a Verilog-A based semiclassical model of dual gate graphene field effect transistor with gapless large-area graphene channels has been presented. Here we have adopted a quasi analytical modeling approach based on Boltzmann transport equation. The explicit expression of drain to source current has been derived. The small signal parameters like drain conductance and transconductance have been derived. Our model shows good agreement with experimental data in literatures. A Verilog-A code has been developed for this model and we have designed a single ended frequency doubler in Cadence Design environment using this Verilog-A model.