V-band 130 nm CMOS multistage amplifier incorporating gain-boosting technique

To design a high gain amplifier at V-band using 130 nm CMOS process, the gain-boosted technique is adopted to increase the maximum achievable gain (G_max). Impedance matching synthesis is investigated for input and output matching circuits based on transmission lines. By adopting appropriate transistor size, a single stage amplifier can achieve the maximum gain of 10 dB at 53 GHz.