Spectral shift of the transparency line of a semiconductor multilayer resonator under pulsed laser radiation

Multilayer microresonators are of interest as low-threshold nonlinear optical devices. Such a resonator for near IR in the form of GaAs/AlAs heterostructure was fabricated and tested. The spectral shift of its transparency line accompanied by the transmittance peak reduction was experimentally observed as a function of the laser pulse energy. Optical limiting characteristic of the resonator was measured as well.