Study of the relation between doping profile and diode CV characteristics

An explicit formula relating Schottky-diode junction capacitance (C/sub j/) as a function of diode bias (V/sub dc/) and Gaussian doping profile (k) has been curve fitted to a one-dimensional numerical analysis. Two-dimensional physical simulation and the explicit formula have been applied to a Schottky diode with both simulated and analytic results compared against measurement. Incomplete ionization, edge effects, and additional charge created by traps have also been investigated using a physical simulation package, and results are presented for different trap densities. The stated formula has been implemented for a Schottky diode model using a symbolically defined device within the HP-MDS harmonic-balance simulator. This has been used as a building block for a nonlinear transmission-line (NLTL) doubler design with simulated and measured second harmonic-power output being presented. The formula, which is easily implemented in computer-aided design tools, is important for NLTL modeling and design.