The method for calculation of carrier concentration in narrow-gap n-type doped CdxHg1−xTe structures

A simple method for the computation of carrier concentration in n-type doped Cd_xHg_1-xTe structures is proposed. The method is based on the postulate on the existence of donor bands. In our model the donor bands are postulated to have a Gaussian distribution of density of states characterized by two parameters only (energy being the centre of gravity for this distribution and standard deviation). These parameters are taken as well as good consistency could be obtained with experimental data, which were comprised of a wide range of doping levels for various kinds of dopants.