Characterization of self-switching diodes as microwave rectifiers using ATLAS simulator

A planar nanodevice, known as the self-switching diode (SSD), has a nonlinear current-voltage (I-V) characteristic which can be exploited as a high-speed rectifier in a wide range of applications. This diode-like I-V behaviour is achieved due to the structure of the device which consists of an asymmetric nanochannel. In this work, the rectification properties of silicon-based SSDs with different geometry of the nanochannel were reported. The characterization have been performed by means of ATLAS device simulator. The results obtained can be used to facilitate in improving the rectifying performance of the device.