Highly reliable anti-fuse technology in sub-16nm technologies for security applications

Logic NVM, with no manufacturing change and high security behavior, provides a simple approach for mobile communication, autotronics and IoT applications. Those increasing product demands bring up with fast logic NVM IP advancement in advanced technology nodes. A logic NVM cell, using anti-fuse programming mechanism to achieve high density and excellent data storage lifetime, is presented in this paper. The cell design and operation scheme realize low programming-inhibit leakage current, fast program speed, and robust data retention in FinFET process. The memory macro is successfully demonstrated for one-time and multi-time programming applications with full compatibility to sub-16nm FinFET processes.