Circuit Envelope physical semiconductor device simulation

We demonstrate for the first time the use of the Circuit Envelope method with the solution of the fundamental semiconductor device equations. The Harmonic Balance method is the starting point for this work and used to illustrate how the spectrum of conduction and displacement current density distributions can be used to infer the sources of device non-linear conductance and capacitance. The class-A simulation of a 0.5 μm by 1 mm gate periphery MESFET is used to demonstrate the simulation of spectral regrowth using a 16 QAM modulated signal with 1 GHz carrier frequency and 2 MHz bandwidth. The discrete Fourier transform of the complex time varying envelope waveforms of current density distribution, in band and adjacent to the spectral mask, is illustrated as a potential approach for troubleshooting adjacent channel performance issues.