10 Gbps operation of membrane DFB laser on silicon with record high modulation efficiency

We successfully demonstrated high-speed direct modulation of GaInAsP/InP membrane DFB laser on Si substrate for on-chip optical interconnection. The device showed threshold current of 0.21mA and single-mode operation with SMSR = 47dB. From small signal modulation, a record high modulation efficiency of 11GHz/mA^1/2 was obtained. A 10 Gbps direct modulation with a bit-error-rate (BER) <; 10^-9 was demonstrated at 1mA bias current.