Crystal MoS2 grown on Si substrates by sulfuring Mo thin films

In order to obtain a large area MoS₂ thin film, a thin Mo film were deposited on Si substrates using E-gun. The samples were placed on a quartz tube within a horizontal furnace to produce MoS₂ in a rich sulfur and argon environment from 700 to 1000°C. Both Scanning electron microscope (SEM) and X-ray diffraction (XRD) results reveal that MoS₂ films grown at the higher temperature possess better crystallization. Raman spectroscopy is employed to determine the behavior of atomic vibration which also provides information about layer structure in MoS₂ films. In addition, reflection measurement shows two obvious peaks located at 1.86 and 2.01 eV when the samples were grown at 900°C which are attributed to excitons A and B.