Fabrication of MoS2 thin films on oxide-dielectric-covered substrates

Solution process of MoS₂ on dielectric films has been investigated. (NH₄)₂MoS₄ dissolved in dimethylformamide is used as a source solution. We have spin-coated the solution on various kinds of dielectric and shown that the coating properties strongly depend on the kind of dielectric. This can be understood by surface energy analysis. Next, it is confirmed from Raman scattering spectroscopy that MoS₂ can be grown on Al₂O₃ and ZrO₂ by solution process with two-step annealing process, where the first annealing is performed at 400°C in H2/Ar (5:95) atmosphere for 30 min and the second annealing at 990°C in Ar atmosphere with S vapor.