Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation

We studied the photonic integrated device of highly-stacked quantum dot (QD) on InP(311)B substrates using quantum dot intermixing (QDI) technique. A photoluminescence (PL) spectral blue-shift by about 190 nm was observed for the QDI process with B⁺ implantation and rapid thermal annealing (RTA) at 620°C. A QD laser integrated with two micro-ring-resonators (MRRs) was successfully fabricated with the QDI technique to show a large output of >20mW and a wavelength selective characteristic associated with MRRs.