Ultra-compact SRAM design using TFETs for low power low voltage applications

This paper presents a hybrid TFET/CMOS SRAM architecture designed to address the requirements for ULP (Ultra-Low Power) applications, like the IoT (Internet of Things). A novel 3-Transistor TFET SRAM cell is used for array while periphery is maintained in standard CMOS. The simulation extractions for power and speed are done including wiring and device parasitics extracted from 4Kb SRAM designed in 28nm FDSOI CMOS process. The proposed 3T-TFET SRAM cell supports aggressive voltage scaling without impacting data stability and allows application of performance boosting techniques without impacting cell leakage. The memory array leakage current is less than 1 fA/bit at sub-0.5V supply voltages, showing up-to 50x and 104x improvement compared with state-of-the-art TFET and CMOS SRAM bitcells, respectively. Bitcell area is reduced by 3x in comparison to existing TFET designs. Evaluated static noise margin (SNM) is 100mV for supply voltages range from 0.2V to 0.6V. Minimum read and write access pulse is evaluated at 15ns at 0.45V supply voltage.