Electrical characteristics of Al foil/Si junctions by surface activated bonding method

We successfully fabricated Al-foil/p-Si junctions by surface activated bonding (SAB). We found that the junctions revealed Schottky properties by measuring their current-voltage characteristics. We also found that the reverse-bias current of the junctions was decreased, i.e., their electrical characteristics were improved by annealing at temperatures below 200 °C. These results demonstrate that the bonding of metal foils should be useful for fabricating several-ten-μm-thick electrodes.