3-D TCAD simulation to optimize the trench termination design for higher and robust BVdss

Optimizing the edge termination design around the periphery of active area is critically important for achieving the highest and stable breakdown voltage (BV_DSS) for any power devices. Active cell structures can be assumed as two dimensional (2-D) in the central part of the die, however as the active cells terminate to the termination regions at the periphery of the die, 2-D and 3-D transition regions are formed at different locations of the die layout with respect to the last edge termination trench. Optimization of the 3-D termination region is imperative to ascertain equal or higher BV_DSS of the termination region than the active cell region. Synopsys advanced multi-dimensional TCAD device simulation tool - “Sentaurus Device Editor (SDE) [1]” is adopted for designing and optimizing the 3-D termination transition region for a higher and robust BV_DSS, which is validated by the experimental data.