Hydrogenic donor impurity in InAs/GaAs core/shell quantum dots: Effect of the dielectric environnement

Groupe III–V semiconductors are well known for their electronics and optical properties. For instance, GaAs semiconductor, which has a direct band gap is used in several important applications such as light-emitting diodes, laser diodes and optical detectors. This work present a theoretical investigation on the binding energy of an off-center single dopant in InAs/GaAs core/shell quantum dots embedded in a glace matrix. The energies with and without the dielectric mismatch are determined in the framework of the effective mass approximation by using the Ritz variational approach. It has been found that the influence of image charge affect considerably the binding energy and the probability densities and it is more pronounced in strong spatial confinement.