Design of a 2.8 W S-band power amplifier using load pull measurement

In this work, SSPL GaN-HEMT based S-band (2.0 to 2.2 GHz) power amplifier design, fabrication, assembly and RF measurement results have been discussed. Designed single stage power amplifier is providing optimized performance over desired band with 15dB small signal gain and 2.8 W (P-1dB) CW power output with 57 % PAE. The design is based on the load pull measurement data and small signal S-parameters. Extensive load pull measurement and Co-EM simulation have been carried out for designing this circuit.