Abstract:
In this work, a low-resistance and low-cost PVD-TiZrN barrier is evaluated for BEOL interconnect. Comparing to conventional PVD barrier, comparable Cu barrier and Cu wett...Show MoreMetadata
Abstract:
In this work, a low-resistance and low-cost PVD-TiZrN barrier is evaluated for BEOL interconnect. Comparing to conventional PVD barrier, comparable Cu barrier and Cu wetting properties are obtained. Moreover, up to 55% of via resistance reduction is achieved, with comparable voltage breakdown performance comparing to conventional one.
Published in: 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)
Date of Conference: 23-26 May 2016
Date Added to IEEE Xplore: 09 July 2016
ISBN Information:
Electronic ISSN: 2380-6338
Contents 