Design and on-wafer measurements of 60GHz MMIC LNA with on-chip active biasing

This paper describes the design and realization of a 60GHz microwave monolithic integrated circuit (MMIC) low-noise amplifier (LNA) based on commercial GaAs metamorphic high electron mobility transistor process with 130nm gate length. An active biasing circuit is embedded in the chip which mitigates the deviation of biasing point, improves the stability and consistency of performance. Both noise and small signal measurements are performed on-wafer, and results show that in the operating frequency range from 57GHz to 63GHz, the gain is more than 25dB and noise figure is around 3dB, output return loss is better than 20dB and input return loss is better than 5dB.