Experimental results of a Large Area (91mm) 4.5kV "Bi-mode Gate Commutated Thyristor" (BGCT)

In this paper, we present the experimental results of the 91mm, 4.5kV Bi-mode Gate Commutated Thyristor (BGCT). The BGCT is a new type of Reverse Conducting Integrated Gate Commutated Thyristor (RC-IGCT) [1]. In this work, we have also compared the results of the BGCT with that of the 91mm, 4.5kV conventional RC-IGCT both electrically (i.e. on-state and turn-off characteristics) and thermally (i.e. temperature distribution during the conduction of the device). The experimental results show that the BGCT has a better technology curve, improved safe operation area, soft reverse recovery behavior and lower leakage current compared to conventional RC-IGCT. The thermal simulation results performed with Abaqus show that BGCT has a better thermal distribution i.e. more uniform temperature distribution throughout the wafer in both GCT- and diode-modes of operation.