Study of different algorithms and models for trapping effect extraction

GaN High Electron Mobility Transistors (HEMTs) are very promising for radiofrequency applications and especially RADAR operation due to their ability to work at high power densities. However, parasitic effects like traps are a common issue on this type of technology. They have to be properly characterized in order to be compensated. Several measurement methods exists like DLTS or DLOS, mostly consisting in a measurement of a current transient at different junction temperatures. This paper presents a comparison between different extraction algorithms for trapping signatures and the possible impact of their imprecision when extracting the activation energy on measurement data. Furthermore, a more physical model for trap extraction will be presented with its limitations.