PDCFET models for high-temperature detectors

The main direction in the development of modern microelectronics is the improvement characteristics of electronic element base in the condition of the high temperature. The method of periodically doped channel is regarded as an application for transistor structures based on organic semiconductors. The possibility of channel conductivity modulation in CMOS transistors, however, is of high interest for high temperature detectors for industrial applications. Using the device-technological systems the models of PDCFETs (Periodically Doped Channel Field-Effect Transistors) and their characteristics have been constructed and simulated in the process of high thermal conditions.