A SiGe Multiplier Array With Output Power of 5–8 dBm at 200–230 GHz

This paper presents an integrated four-way power-combining multiplier for 200-230-GHz applications in an advanced 90-nm silicon germanium HBT technology. The active multiplier is implemented using balanced transistor pairs driven by pseudodifferential power amplifiers (PAs) at 100-120 GHz and the outputs at 200-240 GHz are power combined using reactive λ/4 impedance transformation networks. A single multiplier breakout results in an output power of 1.8 dBm at 245 GHz with a peak conversion gain of -15.5 dB. The power-combining multiplier achieves an output power of 8 dBm at 215 GHz and >5 dBm at 200-230 GHz. A peak conversion gain of 1.6 dB is achieved at an output power of ~0 dBm at 215 GHz. The fourway combined multiplier occupies 3.63 mm
²
, including pads, and consumes 1.2 A from a 1.8 V supply mainly due to the differential 100-120-GHz PAs. To the best of our knowledge, this is the highest output power achieved in multipliers and amplifiers among all silicon-based technology to-date at frequencies above 200 GHz and with a record wide bandwidth.