Ultra-shallow junction formation by outdiffusion from implanted oxide

We present a new method for the fabrication of shallow n/sup +/ and p/sup +/ junctions in silicon. The method consists of implanting a screening oxide followed by a diffusion step to drive the dopant into the silicon. This paper reports on the electrical and physical characteristics of these shallow junctions, and it show results obtained with sub-100 nm NMOS devices fabricated with these junctions.