A novel high-frequency quasi-SOI power MOSFET for multi-gigahertz applications

We have fabricated a high-efficiency quasi-SOI power MOSFET for multi-gigahertz applications. The device was formed by reversed silicon wafer direct bonding which enables easy use of a high-resistivity substrate. The breakdown voltage of the quasi-SOI power MOSFET is more than twice that of a conventional SOI power MOSFET. Fmax of the quasi-SOI power MOSFET is 11.0 GHz, about 15% higher than that of the SOI power MOSFET. The fabricated device has the excellent power added efficiency of 68% at a 2 GHz under 3.6 V operation.